TY  - JOUR
T1  - Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation
AU  - O.B. Okhrimenko
AU  - Yu.Yu. Bacherikov
AU  - O.F. Kolomys
AU  - V.V. Strelchuk
AU  - R.V. Konakova
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 4
SP  - 355
EP  - 361
PY  - 2022
DO  - 10.15407/spqeo25.04.355
UR  - https://doi.org/10.15407/spqeo25.04.355
AB  - In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.
KW  - Nonthermal microwave action
KW  - buffer porous layer
KW  - photoluminescence
KW  - Raman scattering
KW  - silicon carbide.
ER  -