TY  - JOUR
T1  - Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
AU  - M.S. Kukurudziak
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 4
SP  - 385
EP  - 393
PY  - 2022
DO  - 10.15407/spqeo25.04.385
UR  - https://doi.org/10.15407/spqeo25.04.385
AB  - Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.
KW  - photodiode
KW  - phosphorus diffusion
KW  - dislocation
KW  - dark current
KW  - sensitivity.
ER  -