Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (4), P. 388-397 (2023).
Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition
V. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 03680 Kyiv, Ukraine Abstract.
Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical,
optical, and mechanical properties highly tunable by processing and structure. This work
uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray
diffractometry and Raman spectroscopy structural analysis to investigate the intricate
connections between VO x post-annealing, phase composition, and resulting nanoscale
mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter,
indentation is performed on VO x films with systematic variations in structure – from mixed
insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of
hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property
variations are observed between compositions, with order-of-magnitude increases in
hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion
implantation further enhances nanomechanical performance through targeted defect
engineering. Correlating indentation-derived trends with detailed structural and
morphological characterization elucidates explicit structure-property relationships
inaccessible by other techniques. The approach provides critical mechanics-driven insights
into links between VO x synthesis, structure evolution, and property development. Broader
implementation will accelerate processing optimization for electronics and advanced
fundamental understanding of nanoscale structure-functionality relationships
Keywords:polycrystalline vanadium oxide thin films, phase composition, atomic force
microscopy, nanoindentation, X-ray diffraction, Raman spectroscopy, defect engineering,
ion implantation This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|