Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (4), P. 408414 (2023).
Influence of cation Si 4+ ↔ Ge 4+ and P 5+ ↔ Ge 4+ substitution on the mechanical parameters of single crystals Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I
^{1}Uzhhorod National University, 46, Pidgirna str., 88000 Uzhhorod, Ukraine Abstract. Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined. Keywords: argyrodite, single crystal, microhardness. This work is licensed under a Creative Commons AttributionNoDerivatives 4.0 International License.
