Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (4), P. 408-414 (2023).
DOI: https://doi.org/10.15407/spqeo26.04.408

Influence of cation Si 4+ ↔ Ge 4+ and P 5+ ↔ Ge 4+ substitution on the mechanical parameters of single crystals Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I

I.O. Shender 1*, A.I. Pogodin 1, M.J. Filep 1,2 , T.O. Malakhovska 1, O.P. Kokhan 1, V.S. Bilanych 1, K.V. Skubenych 1, O.I. Symkanych 1 , V.Yu. Izai 3, L.M. Suslikov 1

1Uzhhorod National University, 46, Pidgirna str., 88000 Uzhhorod, Ukraine
2Ferenc Rákóczi II Transcarpathian Hungarian Institute, Kossuth Sq. 6, 90200 Beregovo, Ukraine
3Comenius University, Mlynska dolina, Bratislava 84248, Slovakia
*Corresponding author e-mail: shender95@gmail.comm


Abstract. Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.

Keywords: argyrodite, single crystal, microhardness.

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