Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (4), P. 415-423 (2023).
Defect structure of high-resistance CdTe:Cl single crystals and MoO x /CdTe:Cl/MoO x heterostructures according to the data of high-resolution X-ray diffractometry
1Yuriy Fedkovych Chernivtsi National University, Abstract.
Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling
heater method. MoO x /CdTe:Cl/MoO x films were deposited using the reactive magnetron
sputtering technique. The defect structure of the obtained single crystals and
heterostructures was investigated using high-resolution X-ray diffractometry. The
optimized models of dislocation systems in the CdTe:Cl single crystals were constructed
based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as
a function of reciprocal space coordinates and rocking curves was analyzed using the
kinematic theory of X-ray scattering in real crystals. The experimental and theoretically
predicted values of the helical dislocation densities in the CdTe:Cl and MoO x /CdTe:Cl
crystals with perfect and mosaic structures were compared. Two-fold increase in the
dislocation concentration in the MoO x /CdTe:Cl heterostructures as a result of compression
deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition
deformed layer at the boundary between the MoO x film and CdTe:Cl single crystal
significantly affects the electrical and spectroscopic properties of the obtained systems as
the materials for γ-radiation detection.
Keywords: high-resolution X-ray diffractometry, CdTe:Cl single crystals, rocking curves, MoO x /CdTe:Cl heterostructure, γ-radiation detectors. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|