Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (4), P. 415-423 (2023).

Defect structure of high-resistance CdTe:Cl single crystals and MoO x /CdTe:Cl/MoO x heterostructures according to the data of high-resolution X-ray diffractometry

I.M. Fodchuk 1, A.R. Kuzmin 1, I.I. Hutsuliak 1, M.D. Borcha 1, V.O. Kotsyubynsky 2

1Yuriy Fedkovych Chernivtsi National University,
2, Kotsiubynsky str., 58012 Chernivtsi, Ukraine
2Vasyl Stefanyk Precarpathian National University,
57, Shevchenko str., 76018 Ivano-Frankivsk, Ukraine
Corresponding author e-mail:

Abstract. Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling heater method. MoO x /CdTe:Cl/MoO x films were deposited using the reactive magnetron sputtering technique. The defect structure of the obtained single crystals and heterostructures was investigated using high-resolution X-ray diffractometry. The optimized models of dislocation systems in the CdTe:Cl single crystals were constructed based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as a function of reciprocal space coordinates and rocking curves was analyzed using the kinematic theory of X-ray scattering in real crystals. The experimental and theoretically predicted values of the helical dislocation densities in the CdTe:Cl and MoO x /CdTe:Cl crystals with perfect and mosaic structures were compared. Two-fold increase in the dislocation concentration in the MoO x /CdTe:Cl heterostructures as a result of compression deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition deformed layer at the boundary between the MoO x film and CdTe:Cl single crystal significantly affects the electrical and spectroscopic properties of the obtained systems as the materials for γ-radiation detection.

Keywords: high-resolution X-ray diffractometry, CdTe:Cl single crystals, rocking curves, MoO x /CdTe:Cl heterostructure, γ-radiation detectors.

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