@article{Fodchuk2023415Defect,
  author = {I.M. Fodchuk and A.R. Kuzmin and I.I. Hutsuliak and M.D. Borcha and V.O. Kotsyubynsky},
  title = {Defect structure of high-resistance CdTe:Cl single crystals and MoO x /CdTe:Cl/MoO x heterostructures according to the data of high-resolution X-ray diffractometry},
  journal = {Semiconductor Physics, Quantum Electronics \textbackslash{}\& Optoelectronics},
  year = {2023},
  volume = {26},
  number = {4},
  pages = {415--423},
  doi = {10.15407/spqeo26.04.415},
  url = {https://doi.org/10.15407/spqeo26.04.415},
  abstract = {Clorine doped CdTe single crystals (CdTe:Cl) were grown by the traveling heater method. MoO x /CdTe:Cl/MoO x films were deposited using the reactive magnetron sputtering technique. The defect structure of the obtained single crystals and heterostructures was investigated using high-resolution X-ray diffractometry. The optimized models of dislocation systems in the CdTe:Cl single crystals were constructed based on the Thompson tetrahedron. The distribution of the intensity of diffracted X-rays as a function of reciprocal space coordinates and rocking curves was analyzed using the kinematic theory of X-ray scattering in real crystals. The experimental and theoretically predicted values of the helical dislocation densities in the CdTe:Cl and MoO x /CdTe:Cl crystals with perfect and mosaic structures were compared. Two-fold increase in the dislocation concentration in the MoO x /CdTe:Cl heterostructures as a result of compression deformations of the CdTe:Cl crystal lattice was found. The ~0.1 μm thick transition deformed layer at the boundary between the MoO x film and CdTe:Cl single crystal significantly affects the electrical and spectroscopic properties of the obtained systems as the materials for γ-radiation detection.},
  keywords = {high-resolution X-ray diffractometry, CdTe:Cl single crystals, rocking curves, MoO x /CdTe:Cl heterostructure, γ-radiation detectors.}
}