TY  - JOUR
T1  - Formation and properties of GeSn:C films on silicon substrates
AU  - V.O.Yukhymchuk
AU  - O.Yo.Gudymenko
AU  - T.M.Sabov
AU  - O.V.Dubikovskyi
AU  - N.V.Mazur
AU  - V.S.Yefanov
AU  - O.V.Kosulya
AU  - O.S.Oberemok
AU  - B.M.Romanyuk
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 4
SP  - 412
EP  - 417
PY  - 2024
DO  - 10.15407/spqeo27.04.412
UR  - https://doi.org/10.15407/spqeo27.04.412
AB  - The paper reports the formation of GeSn:C films on silicon substrates by thermal spraying of Ge/Sn superlattices followed by implantation of C+ ions into them and annealing at 350 °C. It is shown that compared to Ge films, the crystallization temperature of which is 500 °C, the crystallization temperature of the GeSn and GeSn:C films is significantly reduced, down to 300 and 350 °C, respectively. We explain this effect by the diffusion of tin atoms in the Ge lattice, which decreases the activation energy of the Ge crystallization process. Implantation of C+ ions into a Ge/Sn superlattice reduces the effect of Sn atoms on the crystallization process and, accordingly, increases the crystallization temperature. We have confirmed experimentally that implantation of C+ ions in Ge/Sn structures contributes to the reduction of local stresses in the Ge lattice induced by the incorporation of Sn atoms and thus possibly increases the concentration of incorporated Sn atoms in the Ge lattice. It has been established as well that laser annealing of Ge/Sn structures implanted with C+ ions is more effective for embedding Sn atoms in the Ge lattice as compared to thermal annealing.
KW  - GeSn films
KW  - GeSnC films
KW  - implantation
KW  - XRD
KW  - Raman spectroscopy
KW  - SIMS
ER  -