TY  - JOUR
T1  - Si-based n++-p–-p+-p–-p++ avalanche diode: Self-consistent modeling for infrared optoelectronic applications
AU  - S.V.Sapon
AU  - B.M.Romaniuk
AU  - V.P.Melnik
AU  - O.V.Dubikovskyi
AU  - O.A.Kulbachynskyi
AU  - O.S.Oberemok
AU  - Z.V.Maksimenko
AU  - O.V.Kosulya
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 4
SP  - 457
EP  - 465
PY  - 2024
DO  - 10.15407/spqeo27.04.457
UR  - https://doi.org/10.15407/spqeo27.04.457
AB  - A theoretical approach for modeling electric and photoelectric characteristics of specifically designed Si-based n++-p–-p+-p–-p++ avalanche photodiodes has been developed. The electrostatic characteristics (band bending, built-in electrostatic fields and carrier distributions) and current-voltage characteristics including photocurrent and diode sensitivity to electromagnetic radiation of the near-infrared spectral range have been calculated and analyzed for the room operation temperature. The measured doping profiles in the fabricated prototype of the avalanche Si-based photodiode have been used in the calculations. For a particular set of the photodiode parameters, we have found that the avalanche transport regime occurs at the applied reverse voltage of ~ –47 V across the diode length of 380 μm We have established that the rapid exponential growth of the current densities from 0.01 to 100 μA/cm2 in the range of the applied voltages of –40 to –47 V is inherent for formation of the avalanche-type transport regime. At this, considerable photoresponsibility values of 100 to 30 A/W are predicted for electro-magnetic radiation wavelengths of 0.8 to 1 μA. All the results have been obtained using literature data on field dependences of the impact ionization coefficients, spectral dependences of the optical permittivity (refractive index and extinction coefficient), etc.
KW  - Si-based photodiode
KW  - current-voltage characteristics
KW  - photoresponse
KW  - implantation
ER  -