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Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (4), P. 389–393 (2025). Quantum physics and photoluminescence: contribution of the SPQEO journal Petro Smertenko*, Galyna Rudko, Zoia Maksimenko, Alexander Belyaev
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine Abstract. This article explores the potential applications of photoluminescence (PL) spectroscopy in analyzing the atomic and electronic structures of modern materials, with a specific focus on the rapidly evolving fields of quantum science and nanotechnology. Photoluminescence is a powerful spectroscopic tool for the comprehensive investigation of energy states in semiconductors, dielectrics, organic compounds and a variety of nanoscale structures. Articles published in SPQEO journal showcases progress in nanocomposites, nanoclusters, luminescent nanostructures, and defect-related emission mechanisms. Key findings include the role of electron–phonon interactions in aluminum nitride, the controlled formation and enhanced emission of silicon nanoclusters, impurity-induced modification of luminescence in SiOx-based materials, and defect- and dopant-related PL behaviour in A2B6 semiconductor nanocrystals. PL spectroscopy also sheds light on intricate energy transfer processes in hybrid nanocomposites, molecular donor–acceptor complexes, and emission channels related to vacancies in CdS-based materials. Studies concerning structural defects, phase transformations and impurity diffusion utilizing PL method further substantiate its value in understanding the microstructure, recombination pathways and defect evolution in technically important materials such as SiC, amorphous Si–C films and II–VI semiconductors. Together, these results conclusively demonstrate the versatility and diagnostic power of PL spectroscopy in characterizing materials and enabling advances in quantum technologies, optoelectronic devices and nanoscale engineering. Keywords: quantum physics, photoluminescence, SPQEO journal.
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