Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (4), P. 394–399 (2025).
DOI: https://doi.org/10.15407/spqeo28.04.394
Raman study of thin TlInS films prepared by thermal evaporation
Y.M. Azhniuk1, A.V. Gomonnai1, V.V. Lopushansky1, O.O. Gomonnai2,
T.Y. Babuka2, V.Y. Loya1, L.M. Suslikov2, I.M. Voynarovych1
1Institute of Electron Physics, NAS of Ukraine, 21 Universytetska Street, 88017 Uzhhorod, Ukraine
2Uzhhorod National University, 3 Narodna Square, 88000 Uzhhorod, Ukraine
*Corresponding author e-mail: yu.azhniuk@gmail.com
Abstract. Thin (10…200 nm) TlInS films are prepared by thermal evaporation on silicon and silicate glass substrates. Micro-Raman spectra measured at a rather moderate excitation (532 nm, 4 kW/cm) confirm amorphous character of the films. Narrow features emerging in the spectra at a higher excitation power density (40 kW/cm) testify crystallization of TlInS on the film surface. The formation of crystallites is explained by thermal effect of the absorbed laser light. The film surface is shown to be heated above 150 °C by the 40 kW/cm laser beam.
Keywords: amorphous films, Raman spectroscopy, crystallization, thermal treatment.
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