Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (4), P. 441–448 (2025).
DOI: https://doi.org/10.15407/spqeo28.04.441
Tailoring structural and optical properties of Si-doped HfO2 thin films via target composition and plasma environment
D.V. Khomenkov1,*, S.S. Ponomaryov2, X. Portier3, L.Yu. Melnichuk1, L.Yu. Khomenkova2,4, F. Gourbilleau3, O.V. Melnichuk1,**
1Mykola Gogol State University of Nizhyn, 2 Grafska Street, 16600 Nizhyn, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
3CIMAP/CEA/CNRS/ENSICAEN/UCBN, 6 Boulevard Marechal Juin, 14000 Caen, France
4National University “Kyiv Mohyla Academy”, 2 Skovorody Street, 04070 Kyiv, Ukraine
*Corresponding author e-mail: khomenkov.dv@ndu.edu.ua, dmkhomen@gmail.com
**Co-author e-mail: mov310310@gmail.com
Abstract. Optical and structural properties of as-deposited Si-doped HfO2 thin films were investigated as a function of target composition, substrate temperature (100…500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO2 targets in either pure argon or argon–hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FT...
Keywords: HfO2, Si-doped HfO2, magnetron sputtering, thin films, ellipsometry, FTIR, TEM, Auger spectroscopy.
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