Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (4), P. 464–472 (2025).
DOI: https://doi.org/10.15407/spqeo28.04.464
Optical and light-emitting properties of silicon nanostructures based on SiOx films modified with samarium
K.V. Michailovska*, P.E. Shepeliavyi, V.K. Lytvyn, O.V. Dubikovskyi, V.A. Dan’ko, I.Z. Indutnyi, M.V. Sopinskyy
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 Nauky Avenue, 03028 Kyiv, Ukraine
*Corresponding author e-mail: k_mich@ukr.net
Abstract. The composition, optical and luminescent properties of SiOx:Sm films prepared by vacuum thermal evaporation of a powder mixture of SiO + 1 wt.% Sm have been studied. The study of elemental profiles by time-of-flight secondary ion mass spectroscopy revealed an almost uniform depth distribution of the major elements (Si and O, tracked by presence of Si+, Si2+, O+ and SiO+ ions) as well as Sm (tracked by presence of Sm+ and SmO+ ions). Infrared absorptance spectra (A = 1 – R – T) showed a greater microstructural heterogeneity of the SiOx matrix in the studied films as compared to undoped SiOx films obtained in a similar deposition regime. Further heat treatment in vacuum at 500…700 °C increases the heterogeneity degree of the samples. The optical band gap values of the SiOx:Sm films of 1.5 eV before and 1.77 eV after annealing at 600 °C, determined by the Tauc method correlate well with the literature data for amorphous silicon and Si nanoinclusions in SiO2 matrix, respectively. Measurements of photoluminescence spectra and their analysis have shown that doping of SiOx films with samarium stimulates their decomposition, and heat treatments at temperatures 600 °C form Si nanoparticles in an oxide matrix that exhibit a quantum-size effect.
Keywords: silicon nanoparticles, SiOx, nanocomposite, samarium, rare-earth elements, lanthanoids, luminescence.
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