TY  - JOUR
T1  - Raman study of thin TlInS films prepared by thermal evaporation
AU  - Y.M. Azhniuk
AU  - A.V. Gomonnai
AU  - V.V. Lopushansky
AU  - O.O. Gomonnai
AU  - T.Y. Babuka
AU  - V.Y. Loya
AU  - L.M. Suslikov
AU  - I.M. Voynarovych
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 28
IS  - 4
SP  - 394
EP  - 399
PY  - 2025
DO  - 10.15407/spqeo28.04.394
UR  - https://doi.org/10.15407/spqeo28.04.394
AB  - Thin (10…200 nm) TlInS films are prepared by thermal evaporation on silicon and silicate glass substrates. Micro-Raman spectra measured at a rather moderate excitation (532 nm, 4 kW/cm) confirm amorphous character of the films. Narrow features emerging in the spectra at a higher excitation power density (40 kW/cm) testify crystallization of TlInS on the film surface. The formation of crystallites is explained by thermal effect of the absorbed laser light. The film surface is shown to be heated above 150 °C by the 40 kW/cm laser beam.
KW  - amorphous films
KW  - Raman spectroscopy
KW  - crystallization
KW  - thermal treatment
ER  -