@article{Khomenkov2025Tailoring441,
  author = {D.V. Khomenkov and S.S. Ponomaryov and X. Portier and L.Yu. Melnichuk and L.Yu. Khomenkova and F. Gourbilleau and O.V. Melnichuk},
  title = {Tailoring structural and optical properties of Si-doped HfO 2 thin films via target composition and plasma environment},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2025},
  volume = {28},
  number = {4},
  pages = {441--448},
  doi = {10.15407/spqeo28.04.441},
  url = {https://doi.org/10.15407/spqeo28.04.441},
  abstract = {Optical and structural properties of as-deposited Si-doped HfO 2 thin films were investigated as a function of target composition, substrate temperature (100…500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO 2 targets in either pure argon or argon–hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FT...},
  keywords = {HfO 2, Si-doped HfO 2, magnetron sputtering, thin films, ellipsometry, FTIR, TEM, Auger spectroscopy}
}