TY  - JOUR
T1  - Tailoring structural and optical properties of Si-doped HfO 2 thin films via target composition and plasma environment
AU  - D.V. Khomenkov
AU  - S.S. Ponomaryov
AU  - X. Portier
AU  - L.Yu. Melnichuk
AU  - L.Yu. Khomenkova
AU  - F. Gourbilleau
AU  - O.V. Melnichuk
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 28
IS  - 4
SP  - 441
EP  - 448
PY  - 2025
DO  - 10.15407/spqeo28.04.441
UR  - https://doi.org/10.15407/spqeo28.04.441
AB  - Optical and structural properties of as-deposited Si-doped HfO 2 thin films were investigated as a function of target composition, substrate temperature (100…500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO 2 targets in either pure argon or argon–hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FT...
KW  - HfO 2
KW  - Si-doped HfO 2
KW  - magnetron sputtering
KW  - thin films
KW  - ellipsometry
KW  - FTIR
KW  - TEM
KW  - Auger spectroscopy
ER  -