TY  - JOUR
T1  - Raman study of structural changes in Si-based materials induced by scanning with IR nspulsed laser
AU  - V.M. Dzhagan
AU  - P.M. Lytvyn
AU  - A.A. Korchovyi
AU  - V.O. Yukhymchuk
AU  - V.V. Strelchuk
AU  - K.V. Svezhentsova
AU  - G.M. Androsyuk
AU  - O.V. Dubikovsky
AU  - V.V. Dzhahan
AU  - S.V. Kondratenko
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 28
IS  - 4
SP  - 456
EP  - 463
PY  - 2025
DO  - 10.15407/spqeo28.04.456
UR  - https://doi.org/10.15407/spqeo28.04.456
AB  - With the increasing availability of scanning laser systems and direct laser writing and lithography equipment, investigations of laser modification of materials regain their high relevance for both emerging and well-established semiconductors, such as Si. In this work, we have used Raman spectroscopy to study the structural modification of amorphous Si (aSi), polycrystalline Si (polySi), Si nanocrystals embedded in a SiO 2 matrix (ncSiSiO 2 ), as well as SiO 2 /Si/SiO 2 multilayer structures, subjected to 1064 nm pulsed laser annealing (PLA) by a commercial scanning laser engraver. Raman scattering spectroscopy was the main technique for probing the induced structural changes due to its high sensitivity to phonon peak parameters, structural disorder, and strain. Comparison of the spectra measured at different excitation wavelengths allows probing of the annealed structures at various depths. For aSi, PLA induces local formation of highly crystalline Si patterns, exhibiting a threshold effect with abrupt spectral changes at small (2–3%) variations of PLA power. For SiO 2 /Si/SiO 2 multilayers with different combinations of layer thicknesses, PLA results in relaxation to a state that no longer depends on initial Si and SiO 2 layer thicknesses.
KW  - laser annealing
KW  - amorphous silicon
KW  - polycrystalline silicon
KW  - Si nanocrystals
ER  -