Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (4) P. 005-009 (1999).
References
1. C. Delalande, G. Bastard, J. Orgonasi, J. A. Brum, H. W. Liu, M.Voos, G. Weimann, and W. Schlapp, Many-body effects in a modulation-doped semiconductor quantum well // Phys. Rev. Lett.59(23), pp. 2690-2692 (1987). https://doi.org/10.1103/PhysRevLett.59.2690
2. M. S. Skolnick, J. M. Rorison, K. J. Nash, D. J. Mowbray, P. R.Tapster, S. J. Bass, and A. D. Pitt, Observation of a many-body edge singularity in quantum-well luminescence spectra // Phys.Rev.Lett.58(20), pp. 2130-2133 (1987). https://doi.org/10.1103/PhysRevLett.58.2130
3. Y. C. Chang and G. D. Sanders, Band-mixing effect on the emission spectrum of modulation-doped semiconductor quantum wells // Phys. Rev. B32(8), pp. 5521-5524 (1985). https://doi.org/10.1103/PhysRevB.32.5521
4. D. Heiman, B. B. Goldberg, A. Pinczuk, C. W. Tu, A. C. Gossard, and J. H. English, Optical anomalies of the two-dimensional electron gas in the extreme magnetic quantum limit // Phys. Rev. Lett.61(5), pp. 605-608 (1988). https://doi.org/10.1103/PhysRevLett.61.605
5. T. Uenoyama and L. J. Sham, Many-body theory of magneto-optical spectra in doped quantum wells // Phys. Rev. B 39(15), pp.11044-11049 (1989). https://doi.org/10.1103/PhysRevB.39.11044
7. I.A. Buyanova, T.Lundstrom, A.V. Buyanov, W.M. Chen, W.G. Bi, and C. W. Tu, Strong effects of carrier concentration on the Fermi-edge singularity in modulation-doped InP/InxGa1-xAs heterostructures // Phys. Rev. B 55(11), pp. 7052-7058 (1997). https://doi.org/10.1103/PhysRevB.55.7052
8. T. A. Fisher, P. E. Simmonds, M. S. Skolnick, A. D. Martin, and R. S. Smith, Fermi-energy edge singularity and excitonic enhancement associated with the second subband in asymmetric modulation-doped quantum wells // Phys. Rev. B 48(19), pp. 14253-14263 (1993). https://doi.org/10.1103/PhysRevB.48.14253
9. W. Chen, M. Fritze, W. Walecki, and A. V. Nurmikko, Excitonic enhancement of the Fermi-edge singularity in a dense two-dimensional electron gas // Phys. Rev. B 45(15), pp. 8464-8477(1992). https://doi.org/10.1103/PhysRevB.45.8464
10. S. J. Xu, S. J. Chua, X. H. Tang, and X. H. Zhang, Strong interaction of Fermi-edge singularity and exciton related to N= 2 subband in a modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs quantum well // Phys. Rev. B 54(24), pp. 17701-17704 (1996). https://doi.org/10.1103/PhysRevB.54.17701
11. S. K. Lyo and E. D. Jones, Photoluminescence line shape in degenerate semiconductor quantum wells // Phys. Rev. B 38(6),pp. 4113-4119 (1988). https://doi.org/10.1103/PhysRevB.38.4113
12. C. Colvard, N. Nouri, H. Lee, and D. Ackley, Optical investigations of the high-density electron gas in pseudomorphic InxGa1-xAs quantum-well structures // Phys. Rev. B 39(11), pp. 8033-8036 (1989). https://doi.org/10.1103/PhysRevB.39.8033
13. U. Fano, Effects of configuration interaction on intensities and phase shifts // Phys. Rev.124(6), pp. 1866-1878 (1961). https://doi.org/10.1103/PhysRev.124.1866
14. I. V. Kukushkin, K. von Klitzing, K. Ploog, and V. B. Timofeev, Radiative recombination of two-dimensional electrons in acceptor d-doped GaAs-AlxGa1-xAs single heterojunctions // Phys. Rev.B 40(11), pp. 7788-7792 (1989). https://doi.org/10.1103/PhysRevB.40.7788
15. Y. R. Yuan, K. Mohammed, M. A. A. Pudensi, and J. L. Merz, Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions // Appl. Phys. Lett. 45(7), pp. 739-741 (1984). https://doi.org/10.1063/1.95381