1. S.N. Repinskyi, About self-organization of the phase boundary of the semiconductor crystals // Poverkhnost, 7-8, pp. 12-19(1995). | | 2. I.A. Mazarchuk, L.A. Matveeva, B.D. Nechyporuk et al., Investigation of the undersurface damaged layers in the GaAs crystals // Poverkhnost (Phys., chem., mechan), 2, pp. 73-77 (1992). | | 3. K. Sangval, Crystal etching, Myr, Moscwa (1990). | | 4. V.A. Tyagai, O.V. Snitko, Elecroreflectance of the light in the semiconductors, Naukova dumka, Kyiv (1980). | | 5. T.Ya. Gorbach, R.Yu. Holiney, I.M. Matiyuk et al., Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatment // Semicond. Phys. Quant. Electron. & Optoelectron., 1(1), pp.66-70 (1998). https://doi.org/10.15407/spqeo1.01.066 | | 6. D.E. Aspnes, Third-derivative modulation spectroscopy with low-field electroreflectance // Surf. Sci.,37, pp. 418 (1973). https://doi.org/10.1016/0039-6028(73)90337-3 | | 7. I.M. Tsidilkovskyi, Zone structure of the semiconductor, Nauka, Moskva (1978). | | 8. J.W. Grover and P. Handler, Electroreflectance of silicon // Phys.Rev. B. 9, pp 2600-2606 (1974). https://doi.org/10.1103/PhysRevB.9.2600 | | 9. V.V. Artamonov, M.Ya. Valakh, I.A. Mazarchuk et al., Raman scattering in the GaAs undersurface-damaged layers // Ukr. Phys.Jour., 36(8), pp. 1163-1167 (1991). | | 10. Z. Hang, H. Shen, H. Pollak, Comprehensive investigation of polisch-induced surface strain in (100) and (111) GaAs and InP // J. Appl. Phys., 64 (6), pp. 3233-3242 (1988). https://doi.org/10.1063/1.341542 | | 11. A.P. Begishev, G.B. Galiev, V.V. Kapaev et al., Determination of the charged impurity concentration in the silicon by elecroreflectance // Phys. Tech. Polup., 16 (3), pp. 426-431 (1982). | |
|