Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (4) P. 031-036 (1999).
References
1. 1 A. Wall, C. Caprile and A. Franciosi, New ternary semiconductors for infrared application: Hg1-xMnxTe // J. Vac. Sci.Technol. A4(3), pp. 818-822 (1986). https://doi.org/10.1116/1.573782
4. J.K. Furdyna, Electrical, optical, and magnetic properties of Hg1-xMnxTe // J. Vac. Sci. Technol. 21(1), pp. 220-228 (1982). https://doi.org/10.1116/1.571720
5. J. Kaniewski and A. Mycielski, Optical absorption in Hg1-xMnxTe, x<0.2 mixed crystals // Solid State Communications, 41(12), pp. 959-962 (1982). https://doi.org/10.1016/0038-1098(82)91245-5
6. P. Becla, Infrared photovoltaic detectors utilizing Hg1-xMnxTe and Hg1-x-yCdxMnyTe alloys // J. Vac. Sci. Technol.A4(4), pp.2014-2020 (1986). https://doi.org/10.1116/1.574018
7. O.A. Bodnaruk, I.M. Gorbatyuk, S.E. Ostapov and I.M. Rarenko,Growth and structure perfection of cadmium-mercury and manganese-mercury chalcogenides // Inorganic Materials. 31(10),pp. 1347-1351 (1995).
8. Sun Weiguo, L.A. Kosyachenko and I.M. Rarenko, Anodic fluoride on Hg1-xMnxTe // J. Vac. Sci. Technol.A15(4), pp. 2202-2206 (1997). https://doi.org/10.1116/1.580534
9. L.A. Kosyachenko, I.M. Rarenko, O.A. Bodnaruk, Sun Weiguo and Lu Zheng Xiong, Generation-recombination, tunnel and avalanche processes in Hg1-xMnxTe -based p-n junctions // Bulletin of Chernovtsy University. Physics.(40), pp. 59-64 (1998).
13. E. Janik and G. Karczewski, Carrier transport mechanism in Hg1-xMnxTe photovoltaic diodes // Acta Physica Polonica,A73(3), pp.439-442 (1988).
14. P. Brogowski, H. Mucha and J. Piotrowski, Modification of mercury cadmium telluride, mercury manganese telluride and mercury zinc telluride by ion etching // Phys. Stat. Sol.(a),114, pp. K37-K40 (1989). https://doi.org/10.1002/pssa.2211140154