Semiconductor Physics, Quantum Electronics & Optoelectronics, 1 (1), P. 33-40 (1998)
https://doi.org/10.15407/spqeo1.01.033 PACS 75.50.Pp, 78.20.Ls, 78.55.Et Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg1-xMnxTe Yu. I. Mazur, Institute of Semiconductor Physics, NAS Ukraine, 45 prospekt Nauki, Kyiv, 252028, Ukraine
Paper received 02.06.98; revised manuscript received 27.07.98; accepted for publication 27.10.98. Contents This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License. |