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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N4 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 1 N 1
https://doi.org/10.15407/spqeo1.01

Capacitance spectroscopy of InAs self-assembled quantum dots
P. M. Martin, A. E. Belyaev, L. Eaves, P. C. Main, F. W. Sheard, T. Ihn, M. Henini
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 007-012 (1998).

Photosensitive porous silicon based structures
S. V. Svechnikov, E. B. Kaganovich, E. G. Manoilov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 013-017 (1998).

(M, N)-exponential model in the theory of excitons
V. N. Piskovoi, Ya. M. Strelniker
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 018-032 (1998).

Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg1-xMnxTe
Yu. I. Mazur
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 033-040 (1998).

Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit
N. I. Kashirina, V. V. Kislyuk, M. K. Sheinkman
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 041-044 (1998).

Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
L. Daweritz, H. Grahn, R. Hey, B. Jenichen, K. Ploog, D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, V. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 045-049 (1998).

Switching-on and -off dynamics of MQW structures with bistable electro-optical absorption
V. A. Kochelap, L. L. Bonilla and C. A. Velasco
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 050-056 (1998).

Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes
I. V. Blonskiy, B. I. Lev, M. Ya. Valakh
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 057-060 (1998).

Effect of the desorption process on photoluminescence excitation spectra of porous silicon
T. V. Torchinskaya, N. E. Korsunskaya, L. Yu. Khomenkova, B. R. Dzhumaev, A. Many, Y. Goldstein, E. Savir
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 061-065 (1998).

Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments
T. Ya. Gorbach, R. Yu. Holiney, I. M. Matiyuk, L. A. Matveeva, S. V. Svechnikov, E. F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 066-070 (1998).

Crystallization kinetics of Ge22Sb22Tе56 doped with Se and Ni
E. Garsia-Garsia, M. Yanez-Limon, Y. Vorobiev, F. Espinoza-Beltran, and J. Gonzalez-Hernandez
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 071-074 (1998).

Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te - Cd(Mn, Zn)HgTe and their photoelectrical properties
O. I. Vlasenko, V. M. Babent1sov, Z. K. Vlasenko, A. V. Ponedilok, I. V. Kurilo, I. O. Rudyj, V. V. Kremenitskiy
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 075-081 (1998).

Optical vortices and the flow of their angular momentum in a multimode fiber
A. N. Alexeyev, T. A. Fadeyeva, A. V. Volyar, M. S. Soskin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 082-089 (1998).

Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime
Z. S. Gribnikov, I. M. Gordion, and V. V. Mitin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 090-100 (1998).

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs
V. S. Lysenko, T. E. Rudenko, A. N. Nazarov, V. I. Kilchitskaya, A. N. Rudenko, A. B. Limanov, J.-P. Colinge
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 101-107 (1998).

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures
A. Boutry-Forveille and D. Ballutaud, A. N. Nazarov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 108-111 (1998).

Electrophysical сharacteristics of LEDs based on GaN epitaxial films
P. Ph. Oleksenko, G. A. Sukach, P. S. Smertenko, S. I. Vlaskina, A. B. Bogoslovskaya, I. O. Spichak, D. H. Shin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 112-115 (1998).

Microscopic parameters of a stochastic system and variance of physical quantity (ideal gas, electric current, thermal radiation of a black body)
E. A. Salkov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 116-120 (1998).

A biosensor approach to probe the structure and function of the adsorbed proteins: fibrinogen at the gold surface
B. A. Snopok, K. V. Kostyukevych, O. V. Rengevych, Yu. M. Shirshov, E. F. Venger, I. N. Kolesnikova, E. V. Lugovskoi
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 121-134 (1998).

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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