Capacitance spectroscopy of InAs self-assembled quantum dots P. M. Martin, A. E. Belyaev, L. Eaves, P. C. Main, F. W. Sheard, T. Ihn, M. Henini
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 007-012 (1998).
Photosensitive porous silicon based structures S. V. Svechnikov, E. B. Kaganovich, E. G. Manoilov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 013-017 (1998).
(M, N)-exponential model in the theory of excitons V. N. Piskovoi, Ya. M. Strelniker
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 018-032 (1998).
Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg1-xMnxTe Yu. I. Mazur
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 033-040 (1998).
Theoretical approach to electrodiffusion of shallow donors in semiconductors:
I. Stationary limit N. I. Kashirina, V. V. Kislyuk, M. K. Sheinkman
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 041-044 (1998).
Characteristics of interface corrugations in short-period GaAs/AlAs superlattices L. Daweritz, H. Grahn, R. Hey, B. Jenichen, K. Ploog, D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, V. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 045-049 (1998).
Switching-on and -off dynamics of MQW structures with bistable electro-optical absorption V. A. Kochelap, L. L. Bonilla and C. A. Velasco
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 050-056 (1998).
Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes I. V. Blonskiy, B. I. Lev, M. Ya. Valakh
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 057-060 (1998).
Effect of the desorption process on photoluminescence excitation spectra of porous silicon T. V. Torchinskaya, N. E. Korsunskaya, L. Yu. Khomenkova, B. R. Dzhumaev,
A. Many, Y. Goldstein, E. Savir
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 061-065 (1998).
Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments T. Ya. Gorbach, R. Yu. Holiney, I. M. Matiyuk, L. A. Matveeva, S. V. Svechnikov, E. F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 066-070 (1998).
Crystallization kinetics of Ge22Sb22Tе56 doped with Se and Ni E. Garsia-Garsia, M. Yanez-Limon, Y. Vorobiev, F. Espinoza-Beltran, and J. Gonzalez-Hernandez
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 071-074 (1998).
Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te - Cd(Mn, Zn)HgTe and their photoelectrical properties O. I. Vlasenko, V. M. Babent1sov, Z. K. Vlasenko, A. V. Ponedilok, I. V. Kurilo,
I. O. Rudyj, V. V. Kremenitskiy
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 075-081 (1998).
Optical vortices and the flow of their angular momentum in a multimode fiber A. N. Alexeyev, T. A. Fadeyeva, A. V. Volyar, M. S. Soskin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 082-089 (1998).
Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime Z. S. Gribnikov, I. M. Gordion, and V. V. Mitin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 090-100 (1998).
High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs V. S. Lysenko, T. E. Rudenko, A. N. Nazarov, V. I. Kilchitskaya, A. N. Rudenko, A. B. Limanov, J.-P. Colinge
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 101-107 (1998).
SIMS study of deuterium distribution and thermal stability in ZMR SOI structures A. Boutry-Forveille and D. Ballutaud, A. N. Nazarov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 108-111 (1998).
Electrophysical сharacteristics of LEDs based on GaN epitaxial films P. Ph. Oleksenko, G. A. Sukach, P. S. Smertenko, S. I. Vlaskina, A. B. Bogoslovskaya, I. O. Spichak, D. H. Shin
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 112-115 (1998).
Microscopic parameters of a stochastic system and variance of physical quantity (ideal gas, electric current, thermal radiation of a black body) E. A. Salkov
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 116-120 (1998).
A biosensor approach to probe the structure and function of the adsorbed proteins: fibrinogen at the gold surface B. A. Snopok, K. V. Kostyukevych, O. V. Rengevych, Yu. M. Shirshov, E. F. Venger, I. N. Kolesnikova, E. V. Lugovskoi
Semiconductor physics, quantum electronics and optoelectronics, 1 (1), P. 121-134 (1998).
