https://doi.org/10.15407/spqeo1.01.045
ÓÄÊ 621.315; PACS 68.65.
Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
L. Daweritz, H. Grahn, R. Hey, B. Jenichen, and K. Ploog
Paul-Drude-Institut fur Festkîrperelektronik, Hausvogteinplatz 5-7, D-10117 Berlin, Germany
D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, and V. Litovchenko
Institute of Semiconductor Physics, NAS Ukraine, 45 prospekt Nauki, Kyiv, 252028, Ukraine,
tel./fax: +(380-44)2656391, E-mail: korbutyak@div47.semicond.kiev.ua
Abstract. GaAs/AlAs supelattices with corrugated interfaces have been investigated by the polarized photoluminescence method. Using the theoretical approach, which associates the linear polarization of exciton photoluminescence with the corrugation parameters, experimental results have been fitted to determine the height and lateral extension of corrugations.
Keywords: Superlattice, Corrugation, Polarization, Photoluminescence.
Paper received 11.06.98; revised manuscript received 29.07.98; accepted for publication 28.10.98.
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