Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (1), P. 35-38 (2000)
https://doi.org/10.15407/spqeo3.01.035


oPACS 61.80, 72, 72.20 JV;

Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg0.8Cd0.2Te crystals

I.S.Virt, V.V.Gorbunov

Drogobych I.Franko State Pedagogic University,24, I.Franko St., 293720 Drogobych, Ukraine

Abstract. We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg1-xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects.

Keywords: Hg1-xCdxTe, thermal neutrons, radiation defects, clusters.

[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 153K]

Back to Volume 3 N1

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.