Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics     SPQEO

Exciton-enhanced recombination in silicon at high concentrations of charge carriers
A.V. Sachenko, A.P. Gorban, V.P. Kostylyov
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 005-010 (2000).
Abstract

Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 011-014 (2000).
Abstract

Ultrasound effect on radiation damages in boron implanted silicon
B. Romanjuk, D. Kruger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 015-018 (2000).
Abstract

Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
P.A.Selishchev
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 019-021 (2000).
Abstract

Development and optical characteristics of the macroporous silicon structures
L.A. Karachevtseva, O.A. Lytvynenko, O.J. Stronska
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 022-025 (2000).
Abstract

Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation
V. A. Gnatyuk, O. S. Gorodnychenko, P. O. Mozol, O. I. Vlasenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 026-030 (2000).
Abstract

Laser – induced donor centers in p -InSb
L. Fedorenko, A. Medvid
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 031-034 (2000).
Abstract

Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg 0.8 Cd 0.2 Te crystals
I.S. Virt, V.V. Gorbunov
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 035-038 (2000).
Abstract

Luminescence and photoconductivity of poly-n-epoxypropylcarbazole with intramolecular charge transfer compounds
N.A. Davidenko, N.G. Kuvshinsky, V.G. Syromiatnikov
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 039-044 (2000).
Abstract

AFM study of micromorphology and microscopic growth mechanisms of Hg 1-x Cd x Te LPE epitaxial layers
G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 045-051 (2000).
Abstract

Infrared detectors: outlook and means
F. F. Sizov
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 052-058 (2000).
Abstract

Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere
B. A. Snopok , K. V. Kostyukevych, G.V. Beketov, S.A. Zinio, Y. M. Shirshov, E.F. Venger, S.V. Veriovka
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 059-068 (2000).
Abstract

Theoretical investigation of light absorption and scattering by nanoparticles
S.I. Pokutnyi, V.V. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 069-076 (2000).
Abstract

Optical properties, form of granules and electronic parameters of binary Al/Cr composites
I.A. Shaykevich, P.V. Kolesnyk
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 077-081 (2000).
Abstract

Science and technology excimer laser complex and examples of its applications
S.M. Baschenko, I.V. Blons‘kiy.
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 082-090 (2000).
Abstract

Strain effect in surface acoustic wave elements with a piezoelectric acoustic line and sensors based on this effect
Ya.I. Lepikh
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 091-093 (2000).
Abstract

Diffraction of optical beams by a half-plane
S. Anokhov, A. Khizhnyak, R. Lymarenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 094-101 (2000).
Abstract

Residual error after non-uniformity correction
V.N. Borovytsky
Semiconductor physics, quantum electronics and optoelectronics, 3 (1), P. 102-105 (2000).
Abstract