https://doi.org/10.15407/spqeo4.01.029
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 29-33.
PACS: 68.18, 81.15.L
Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk
Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Prospekt Nauky 45,
03028, Kyiv-28, Ukraine, Phone: 380(44)265-60-40, E-mail: nesteren@lab32.kuev.ua
D. De Rossi
Centro 'E Piaggio' Facolta di Ingegneria Universita di Pisa, Via Dioticalvi, 2, 56100 Pisa, Italy
Phone: 39(50)55-36-39, E-mail: derossi@piaggio.ccii.unipi.it
V.I. Kalchenko
Institute of Organic Chemistry of the National Academy of Sciences of Ukraine, Prospekt Zabolotnogo 160,
252 143, Kyiv, Ukraine, Phone: 380(44)559-60-67, E-mail:vik@ukrpak.net
Abstract. p-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been proved. The surface potentials and molecular concentrations have been measured for all the compounds under investigation. Normal components of the dipole moments were analyzed for observed calixarenes. In monolayered structures they appeared to be positive for the molecules as a whole as well as for their parts.
Keywords: Langmuir-Blodgett films, calixarene, dipole moments.
Paper received 12.09.00; revised manuscript received 15.12.00; accepted for publication 16.02.01.
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