Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics     SPQEO

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
P.I. Baranskii, V.M. Babich, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 001-004 (2001).
Abstract

Crystallochemistry of defects in lead telluride films
D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 005-008 (2001).
Abstract

Effect of surface condition on strain in semiconductor crystal sample
B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 009-011 (2001).
Abstract

Electronic properties of silicon surface at different oxide film conditions
S.I. Kirillova, V.E. Primachenko, E.F. Venger, V.A. Chernobai
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 012-018 (2001).
Abstract

Structural investigations of annealed ZnS:Cu, Ga film phosphors
Lytvyn O.S., Khomchenko V.S., Kryshtab T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov Yu.A.
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 019-023 (2001).
Abstract

Features of electrical charge transfer in porous silicon
L.S. Monastyrskii
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 024-028 (2001).
Abstract

Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk D. De Rossi, V.I. Kalchenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 029-033 (2001).
Abstract

Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well
A.V. Korovin
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 034-039 (2001).
Abstract

Electrical properties of macroporous silicon structures
Karachevtseva L.A., Lytvynenko O.A., Malovichko E.A., Sobolev V.D., Stronska O.J.
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 040-043 (2001).
Abstract

Activation of porous Si blue emission due to preanodization ion implantation
A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 044-047 (2001).
Abstract

Aging of ZnS:Mn thin – film electroluminescent devices grown by two different atomic-layer epitaxial processes
N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tцrnqvist K.M. Vasama
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 048-055 (2001).
Abstract

Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters
B.A. Snopok, K.V. Kostyukevich, S.I. Lysenko, P.M. Lytvyn, O.S. Lytvyn, S.V. Mamykin, S.A. Zynyo, P.E. Shepelyavyj, E.F.Venger, S.A. Kostyukevich, Yu.M. Shirshov
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 056-069 (2001).
Abstract

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices
S.A. Kostyukevych, N.L. Moskalenko, P.E. Shepeliavyi, V.I. Girnyk, I.V. Tverdokhleb, A.A. Ivanovsky
Semiconductor physics, quantum electronics and optoelectronics, 4 (1), P. 070-073 (2001).
Abstract