https://doi.org/10.15407/spqeo4.01.048
oSemiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 48-55.
PACS: 78.60.Fi, 78.66.Hf, 71.55.Gs
Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes
N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko and L.I. Veligura
Institute of Semiconductor Physics, NAS of Ukraine, Prospekt Nauki, 45, Kiev, 252028 Ukraine,
tel. 38 044 2656252; fax: 38 044 2658342; e-mail: vlasenko@isp.kiev.ua
El. Soininen, R.O. Törnqvist and K.M. Vasama
Planar International Ltd, Olarinluoma, 9, P.O.Box 46, FIN-02201 Espoo, Finland;
fax: 358 9 422143; e-mail: runar_tornqvist@planar.com
Abstract. Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl2, , and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed.
Keywords: electroluminescence, thin films, ZnS:Mn, atomic-layer epitaxy, aging.
Paper received 15.12.00; revised manuscript received 09.01.01; accepted for publication 16.02.01.
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