Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 25-30.

PACS: 78.55.Et; 78.55.-m

Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
N.D. Vakhnyak¹⁾, S.G. Krylyuk²⁾, Yu.V. Kryuchenko²⁾, I.M. Kupchak²⁾

1) Yu.Fed’kovych Chernivtsi National University, 2 Kotsyubynsky st., 58012 Chernivtsi, Ukraine
2) Institute of Semiconductor Physics, NAS of Ukraine, 45 Prospect Nauki, 03028 Kyiv, Ukraine
Phone/fax: +380 (44) 265 6391, e-mail: div47@isp.kiev.ua

Abstract. Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors.

Keywords: cadmium telluride, photoluminescence, g-irradiation, Huang-Rhys factor, low dose effect, self-compensation
Paper received 20.02.02; revised manuscript received 28.02.02; accepted for publication 05.03.02.

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