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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N4 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 5 N 1
https://doi.org/10.15407/spqeo5.01

Electronic band structure and magnetic susceptibility of Ge1-xSix solid solutions
V.G. Deibuk, S.I. Shakhovtsova, V.A. Shenderovski, V.M. Tsmots
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 005-008 (2002).

Urbach's rule peculiarities in structures with CdSXSe1-X nanocrystals
V.P. Kunets, N.R. Kulish, Vas. P. Kunets, M.P. Lisitsa
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 009-015 (2002).

Atomic and electronic structure of a-SiC
V.I. Ivashchenko, V.I. Shevchenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 016-024 (2002).

Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 025-030 (2002).

Properties and application of ultrasonic Lamb waves in CdXHg1-X Te plates
I.O. Lysiuk, V.F. Machulin, Ya.M. Olikh
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 031-035 (2002).

Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
V.N. Tkach
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 036-038 (2002).

Interface roughness induced intrasubband scattering in a quantum well under an electric field
G.B. Ibragimov
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 039-041 (2002).

Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa1-x As/GaAs
A.I. Klimovskaya, N.N. Grigor'ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 042-045 (2002).

Current flow mechanisms in p-i-n­ structures based on cadmium telluride
P.M. Gorley , M.V. Demych, V.P. Makhniy, Zs. J. Horvath, V.A. Shenderovsky
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 046-050 (2002).

Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/ n-Pb 0.935 Sn 0.065 Te 0.243 Se 0.757 /In Schottky barrier structures
A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 051-057 (2002).

On origin of rapid portion of luminance-voltage dependneence of ZnS:Mn TFEL devices and its aging behavior
N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O.Tornqvist K.M. Vasame
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 058-062 (2002).

III-V material solar cells for space applications
T.V. Torchynska, G. P. Polupan
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 063-070 (2002).

Silicon carbide LED
S.I.Vlaskina
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 071-075 (2002).

Study of supercapacitors with a double electrical layer based on activated carbon materials
I.M. Budzulyak, Z.D. Kovalyuk, F.V. Motsnyi, V.B. Orletskyi
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 076-077 (2002).

Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation
T. Haccart, E. Cattan, D. Remiens
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 078-088 (2002).

Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 089-094 (2002).

Reststrahlen spectroscopy of MgAl2O4 spinel
N.N. Boguslavska, E.F. Venger, N.M. Vernidub, Yu.A. Pasechnik, K.V. Shportko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 095-100 (2002).

Borophosphosilicate glass component analysis using secondary neutrals mass spectrometry (SNMS)
O. Oberemok, P. Lytvyn
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 101-105 (2002).

ultilevel computer-generated holograms for reconstructing 3-D images in combined optical-digital security devices
V.I. Girnyk, S.O. Kostyukevych, P.Ye. Shepeliavyi, A.V. Kononov , I. S. Borisov
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 106-114 (2002).

Allowable deviation of LC layer thickness in cholesteric LCDs
A. Rybalochka, V. Sorokin, A. Sorokin
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 115-118 (2002).

Static realization of reliable positional indication
A.V. Bushma, G.A. Sukach
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 119-123 (2002).

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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