Electronic band structure and magnetic susceptibility of Ge1-xSix solid solutions V.G. Deibuk, S.I. Shakhovtsova, V.A. Shenderovski, V.M. Tsmots
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 005-008 (2002).
Urbach's rule peculiarities in structures with CdSXSe1-X nanocrystals V.P. Kunets, N.R. Kulish, Vas. P. Kunets, M.P. Lisitsa
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 009-015 (2002).
Atomic and electronic structure of a-SiC V.I. Ivashchenko, V.I. Shevchenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 016-024 (2002).
Influence of g-irradiation on photoluminescence spectra of CdTe:Cl N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 025-030 (2002).
Properties and application of ultrasonic Lamb waves in CdXHg1-X Te plates I.O. Lysiuk, V.F. Machulin, Ya.M. Olikh
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 031-035 (2002).
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates V.N. Tkach
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 036-038 (2002).
Interface roughness induced intrasubband scattering in a quantum well under an electric field G.B. Ibragimov
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 039-041 (2002).
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa1-x As/GaAs A.I. Klimovskaya, N.N. Grigor'ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 042-045 (2002).
Current flow mechanisms in p-i-n structures based on cadmium telluride P.M. Gorley , M.V. Demych, V.P. Makhniy, Zs. J. Horvath, V.A. Shenderovsky
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 046-050 (2002).
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/ n-Pb 0.935 Sn 0.065 Te 0.243 Se 0.757 /In Schottky barrier structures A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 051-057 (2002).
On origin of rapid portion of luminance-voltage dependneence of ZnS:Mn TFEL devices and its aging behavior N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O.Tornqvist K.M. Vasame
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 058-062 (2002).
III-V material solar cells for space applications T.V. Torchynska, G. P. Polupan
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 063-070 (2002).
Silicon carbide LED S.I.Vlaskina
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 071-075 (2002).
Study of supercapacitors with a double electrical layer based on activated carbon materials I.M. Budzulyak, Z.D. Kovalyuk, F.V. Motsnyi, V.B. Orletskyi
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 076-077 (2002).
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation T. Haccart, E. Cattan, D. Remiens
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 078-088 (2002).
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 089-094 (2002).
Reststrahlen spectroscopy of MgAl2O4 spinel N.N. Boguslavska, E.F. Venger, N.M. Vernidub, Yu.A. Pasechnik, K.V. Shportko
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 095-100 (2002).
Borophosphosilicate glass component analysis using secondary neutrals mass spectrometry (SNMS) O. Oberemok, P. Lytvyn
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 101-105 (2002).
ultilevel computer-generated holograms for reconstructing 3-D images in combined optical-digital security devices V.I. Girnyk, S.O. Kostyukevych, P.Ye. Shepeliavyi, A.V. Kononov , I. S. Borisov
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 106-114 (2002).
Allowable deviation of LC layer thickness in cholesteric LCDs A. Rybalochka, V. Sorokin, A. Sorokin
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 115-118 (2002).
Static realization of reliable positional indication A.V. Bushma, G.A. Sukach
Semiconductor physics, quantum electronics and optoelectronics, 5 (1), P. 119-123 (2002).
