Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 39-41.

PACS: 68.65,73.20.D

Interface roughness induced intrasubband scattering in a quantum well under an electric field
G.B. Ibragimov

Institute of Physics, Academy of Science of the Azerbaijan, 33 H. Javid av., 370143 Baku, Azerbaijan
Fax: +380 (99412) 39 5961; e-mail: physic@physics.ab.az

Abstract. Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case.

Keywords: interface roughness, intrasubband transition, quantum well.
Paper received 23.06.01; revised manuscript received 21.12.01; accepted for publication 05.03.02.

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