https://doi.org/10.15407/spqeo5.01.058
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 58-62.
PACS: 71.55.Gs, 78.60.Fi, 78.66.Hf
On origin of rapid portion of luminance-voltage
dependence of ZnS:Mn
TFEL devices and its aging behavior
N.A. Vlasenko1), Z.L. Denisova1),
Ya.F. Kononets1), L.I. Veligura1), M.M. Chumachkova1),
Yu.A. Tsyrkunov2), E.L. Soininen3), R.O.Tornqvist3),
K.M. Vasame3)
1)Institute of Semiconductor Physics, NAS of
Ukraine, 45 prospekt Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 265 6252; fax: +380 (44) 265 8342; e-mail: vlasenko@isp.kiev.ua
2)Special Technological and Design Office of ISP, NAS of Ukraine,
4 Lisogorskaya, 03028 Kyiv, Ukraine
Phone: +380 (44) 265 1836; fax: +380 (44) 265 0555; e-mail: tzyrk@sktb4.semicond.kiev.ua
3) Planar International, Ltd.Olarinluoma 9, P.O. Box 46, FIN -02201,
Espoo, Finland
Fax: 358 942 2143; e-mail: runar_tornqvist@planar.com
Abstract. Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at. %) were deposited by electron-beam evaporation and two atomic-layer epitaxy processes based on chlorine (ZnCl2, MnCl2) or organic (diethyl Zn and Mn(thd)3 ) precursors. It has been studied interrelation between these peculiarities and the differences observed in the photodepolarization spectra of the devices, which give data about defects in the ZnS:Mn films and the energy of corresponding local states in them. The obtained results are discussed as to physical processes responsible for the rapid portion of the above voltage dependences and for the causes of its change after short-time accelerated aging.
Keywords: electroluminescence, thin-films, ZnS:Mn, aging.
Paper received 26.11.01; revised manuscript received
22.01.02; accepted for publication 05.03.02.
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