https://doi.org/10.15407/spqeo5.01.071
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 71-75.
PACS: 77.55.+f, 77.80.
Silicon carbide LED
S.I. Vlaskina
Institute of Semiconductor Physics, NAS of Ukraine,
45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 269 3792; fax +380 (44) 265 8342; e-mail: businkaa@mail.ru
Dong Seoul College, 461-714, 423, Bokjung-Dong, Sungnam-city, Kyonggi-do,
Korea
Phone: 82 (031) 720 2141; fax: 82 (031) 720 2261; e-mail: svitlana@haksan.dsc.ac.kr
Abstract. Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (indicators, screens). The silicon carbide LED technology has been investigated for improvement of their operational characteristics. This includes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al+ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m2 with passing current about 0.5 mA through area 50x50 mm and applied voltage about 2.6 ± 0.2 V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600 K.
Keywords: silicon carbide, LED, ion implantation
Paper received 05.02.02; revised manuscript received
08.02.02; accepted for publication 05.03.02.
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