Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (1), P. 089-094 (2002)
https://doi.org/10.15407/spqeo5.01.089


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 89-94.

PACS: 78.20.-e

Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
S.L. Bravina1), E. Cattan2), N.V. Morozovsky1), D. Remiens2)

1) Institute of Physics, NAS of Ukraine, 46 prospect Nauki, 03028 Kyiv, Ukraine
e-mail: bravina@iop.kiev.ua
2) LAMAC-dept. MIMM, Universite de Valenciennes et du Hainaut-Cambresis, CRITT-Z.I. Champ de l’Abbesse, 59600 Maubeuge, France
e-mail: eric.cattan@univ.valenciennes.fr

Abstract. The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO2/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems.

Keywords: PZT-ceramic films, quadrant-diagonal electrode system, position-sensitivity, pyroelectric detectors, photopyromodulation method.

Paper received 10.12.01; revised manuscript received 08.02.02; accepted for publication 05.03.02.

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