Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 37-40.

PACS: 71.30.+h

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
S.I. Budzulyak1, V.M. Ermakov1, B.R. Kyjak2, V.V. Kolomoets1, V.F. Machulin1, M.K. Novoselets3, L.I. Panasjuk2, B.B. Sus'3, E.F. Venger1

1Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6280; fax: +38(044) 265 6391; e-mail: kolomoe@class.semicond.kiev.ua
2Institute of Physics, NAS of Ukraine, 46 prospect Nauky, 03028 Kyiv, Ukraine
3National Taras Shevchenko University of Kyiv, 64 Volodymyrska street, 01033 Kyiv, Ukraine
Phone: +38(044) 266 1073; e-mail: suse@univ.kiev.ua

Abstract. Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.

Keywords: many-valley semiconductors, metal-insulator transition, effective-mass theory, high uniaxial pressure
Paper received 27.12.02; accepted for publication 18.03.03.

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