Volume 6 (2003) Author Index (pdf 161K)

 

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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS


Contents

(5) The energy structure of free electrons for semiconductor in the field of cylindrical symmetry
J.M. Stakhira, R.J. Stakhira

(9) Theory the free-carrier absorption in quantum wires with boundary roughness scattering
G.B. Ibragimov

(14) High-temperature configurations of dimers in Si (001) surface layers
A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev

(19) High-power low-frequency current oscillations in germanium samples
S.P. Pavljuk

(23) Polyassociative thermodynamical model of A2B6 semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system
P.P. Moskvin, L.V. Rashkovets'kyi, S.V. Kavertsev, G.I. Zhovnir, A.O. Ruden'kyi

(28) Energy levels of rare-earth ions on crystal lattice sites of cubic symmetry
C.A.J. Ammerlaan

(32) Electron field emission from SiOx films
└.└. ┼vtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.╠. Lytvyn, D.╬. ╠azunov, Yu.V. Rassamakin, P.┼. Shepeliyavyi

(37) Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
S.I. Budzulyak, E.F. Venger, Yu.P. Dotsenko, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, M.K. Novoselets, B.B. Sus'

(41) Determination of surface parameters of solids by methods of X-ray total external reflection
S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn

(47) Diffusion and mobility of native point defects in narrow-gap Hg1-xCdxTe crystals
V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbano

(53) Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J.Ratajczak

(55) High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin

(58) Electrical activity of misfit dislocations in GaAs-based heterostructures
Tadeusz Wosinski

(62) Electron emission modulation effects in micro-size structures
H. Hartnagel

(68) Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition
B.V. Andriyevsky, M.O. Romanyuk, Yu.A. Dumka

(73) Relaxation and thermoinduced processes in glassy HgSe(x)ľGeSe2(1ľx) alloys
V.V. Halyan, V.V. Bozhko

(76) Electric and dielectric properties of glasses of Cu-Sb-S-I system
V.M. Rubish

(81) Origin of surface layer on common substrates for functional material films probed by ellipsometry
A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko

(86) The way of photonic crystal formation in A3B5 and A2B6 semiconductors
A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz

(91) An arithmetic logic unit of a computer based on single electron transport system
A.K. Biswas, S.K. Sarkar

(97) About manifestation of the piezojunction effect in diode temperature sensors
V.L. Borblik,Yu.M. Shwarts, E.F. Venger

(102) Charge carrier generation in photosensitive amorphous molecular semiconductors
M.A. Zabolotny

(105) Study of DNA interaction with carbon nanotubes
G.I. Dovbeshko, O.P. Repnytska, E.D. Obraztsova, Ya.V. Shtogun, E.O. Andreev

Contents [35 Kb pdf] Cover page [ 38Kb pdf]