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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N4 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 6 N 1
https://doi.org/10.15407/spqeo6.01

The energy structure of free electrons for semiconductor in the field of cylindrical symmetry
J.M. Stakhira, R.J. Stakhira
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 005-008 (2003).

Theory the free-carrier absorption in quantum wires with boundary roughness scattering
G.B. Ibragimov
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 009-013 (2003).

High-temperature configurations of dimers in Si (001) surface layers
A.E. Kiv, T.I. Maksymova, N.V. Moiseenko, V.N. Soloviev
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 014-018 (2003).

High-power low-frequency current oscillations in germanium samples
S.P. Pavljuk
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 019-022 (2003).

Polyassociative thermodynamical model of A2B6 semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system
P.P. Moskvin, L.V. Rashkovets'kyi, S.V. Kavertsev, G.I. Zhovnir, A.O. Ruden'kyi
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 023-027 (2003).

Energy levels of rare-earth ions on crystal lattice sites of cubic symmetry
C.A.J. Ammerlaan
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 028-031 (2003).

Electron field emission from SiOx films
А.А. Еvtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.М. Lytvyn, D.О. Мazunov, Yu.V. Rassamakin, P.Е. Shepeliyavyi
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 032-036 (2003).

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
S.I. Budzulyak, E.F. Venger, Yu.P. Dotsenko, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, M.K. Novoselets, B.B. Sus'
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 037-040 (2003).

Determination of surface parameters of solids by methods of X-ray total external reflection
S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 041-046 (2003).

Diffusion and mobility of native point defects in narrow-gap Hg1-xCdxTe crystals
V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbano
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 047-052 (2003).

Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J.Ratajczak
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 053-054 (2003).

High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 055-057 (2003).

Electrical activity of misfit dislocations in GaAs-based heterostructures
Tadeusz Wosinski
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 058-061 (2003).

Electron emission modulation effects in micro-size structures
H. Hartnagel
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 062-067 (2003).

Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition
B.V. Andriyevsky, M.O. Romanyuk, Yu.A. Dumka
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 068-072 (2003).

Relaxation and thermoinduced processes in glassy HgSe(x)–GeSe2(1–x) alloys
V.V. Halyan, V.V. Bozhko
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 073-075 (2003).

lectric and dielectric properties of glasses of Cu-Sb-S-I system
V.M. Rubish
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 076-080 (2003).

Origin of surface layer on common substrates for functional material films probed by ellipsometry
A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 081-085 (2003).

The way of photonic crystal formation in A3B5 and A2B6 semiconductors
A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 086-090 (2003).

An arithmetic logic unit of a computer based on single electron transport system
A.K. Biswas, S.K. Sarkar
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 091-096 (2003).

About manifestation of the piezojunction effect in diode temperature sensors
V.L. Borblik,Yu.M. Shwarts, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 097-101 (2003).

Charge carrier generation in photosensitive amorphous molecular semiconductors
M.A. Zabolotny
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 102-104 (2003).

Study of DNA interaction with carbon nanotubes
G.I. Dovbeshko, O.P. Repnytska, E.D. Obraztsova, Ya.V. Shtogun, E.O. Andreev
Semiconductor physics, quantum electronics and optoelectronics, 6 (1), P. 105-108 (2003).

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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