https://doi.org/10.15407/spqeo6.01.076
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 76-80.
PACS: 72.15.Cz, 73.61.Jc, 77.22.-d
Electric and dielectric
properties of glasses of Cu-Sb-S-I system
V.M. Rubish
Uzhhorod National University, 46 Pidhirna
st., 88000 Uzhhorod, Ukraine
Phone: +38(0312) 61 3260; e-mail: rubish@iss.univ.ua
Abstract. D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*104 - 6.0*107 Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS2 system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu+S-SbS2/2 in the glass matrix define dielectric proporties of glasses.
Keywords: chalcogenide glasses, conductivity, activation energy, dielectric properties
Paper received 25.10.02; accepted
for publication 18.03.03.
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