Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 102-104.

PACS: 71.35, 72.40, 72.80.1

Charge carrier generation in photosensitive amorphous molecular semiconductors
M.A. Zabolotny

T. Shevchenko Kyiv National University, 64 vul. Volodymirska, 01033 Kyiv, Ukraine

Abstract. Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).

Keywords: amorphous molecular semiconductors, thermalization time, thermalization length.
Paper received 15.01.03; accepted for publication 18.03.03.

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