Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (1) P. 097-101 (2003).
References
1. J.J. Wortman, J.R. Hauser and R.M. Burger, Effect of mechanical stress on p-n junction device characteristics // J.Appl. Phys.35(7), pp. 2122-2131 (1964). https://doi.org/10.1063/1.1702802
2. Y.Kanda, Effect of stress on germanium and silicon p-n junction // Jpn. J. Appl. Phys. 6(4), pp. 475-486 (1967). https://doi.org/10.1143/JJAP.6.475
3. J.F. Creemer and P.J. French, The piezojunction effect in bipolar transistors at moderate stress level: a theoretical and experimental study // Sensors and Actuators A82 (1-3), pp.181-185 (2000). https://doi.org/10.1016/S0924-4247(99)00362-3
4. J.F. Creemer, The effect of mechanical stress on bipolar transistor characteristics. Ph. D. Thesis of Delft University of Technology, 2002.
5. V.L. Borblik, Yu.M. Shwarts and E.F. Venger, Effect of mechanical stress on operation of diode temperature sensors // Semicond. Physics, Quantum Electronics & Optoelectronics, 5(3), pp. 322-327 (2002). https://doi.org/10.15407/spqeo5.03.322
6. C. Herring and E. Vogt, Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering // Phys. Rev.101 (3), pp. 944-961 (1956). https://doi.org/10.1103/PhysRev.101.944
7. T. Manku and A. Nathan, Valence-band structure for strained group-IV semiconductors // J. Appl. Phys.73(3), pp. 1205-1213 (1993). https://doi.org/10.1063/1.353287
8. G.L. Bir and G.Å. Pikus, Symmetry and stain-induced effects in semiconductors, Wiley, New York ,1974.
10. J.C. Hensel and G. Feher, Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials // Phys. Rev.129(3),pp. 1041-1062 (1963). https://doi.org/10.1103/PhysRev.129.1041
11. F.L. Madarasz, J. E. Land and P.M. Hemeger, Effective masses for non-parabolic bands in p-type silicon // J. Appl.Phys. 52 (7), pp. 4646-4648 (1981). https://doi.org/10.1063/1.329345
12. M.V. Fischetti and S.E. Laux, Band structure, deformation potentials and carrier mobility in strained Si, Ge, and SiGe alloys // J. Appl. Phys. 80(4), pp. 2234-2252 (1996). https://doi.org/10.1063/1.363052
13. Friedel P., Hybertsen M. S. and Schluter M. Local empirical pseudopotential approach to the optical properties of Si/Ge superlattices // Phys. Rev.B 39, pp. 7974-7977 (1989). https://doi.org/10.1103/PhysRevB.39.7974