https://doi.org/10.15407/spqeo6.01.097
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 97-101.
PACS: 07.07.Df, 77.65.Ly, 85.30.Kk
About manifestation of the
piezojunction effect in diode temperature sensors
V.L. Borblik,Yu.M. Shwarts, E.F. Venger
Institute of Semiconductor Physics, NA Sciences of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6292, e-mail: borblik@lab2.semicond.kiev.ua
Abstract. An analytical theory of piezojunction effect has developed in application
to silicon diode temperature n+-p type sensors, which for the
first time takes into account three-subbands structure of the valence
band of silicon. The compressive and tensile stresses (along the main
crystallographic directions), long- and short-base diodes, longitudinal
and transverse effects have been considered.
It is shown that the three-subbands model results in even more nonlinear
dependence of changes in the sensor readings on stress value (in comparison
with the two-subbands model), holds minimality of the longitudinal piezojunction
effect under stress orientation along the [100] direction and predicts
substantially larger effect value for the strain perpendicular to the
current through the diode.
Keywords: diode temperature sensor, mechanical stress, piezojunction effect, silicon.
Paper received 27.12.02; accepted
for publication 18.03.03.
Download full text in PDF [PDF 166K
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.