PACS: 85.30.Kk

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
N.S. Boltovets1, V.N. Ivanov1, R.V. Konakova2, Ya.Ya. Kudryk2, V.V. Milenin2, O.S. Lytvyn2, P.M. Lytvyn2, S.I. Vlaskina2, O.A. Agueev3, A.I. Svetlichny3, S.I. Soloviev4, T.S. Sudarshan4

1Research Institute "Orion", 03057 Kiev, Ukraine
2V. Laskaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
45, prospect Nauky, 03028 Kiev, Ukraine, E-mail: konakova@isp.kiev.ua
3Taganrog State University of Radio Engineering, 347900 Taganrog, Russia
4Department of Electrical Engineering, University of South Carolina, SC 29208 Columbia, USA

Abstract. Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.

Keywords: Schottky barrier, amorphous films, Auger spectroscopy, atomic force microscopy
Paper received 25.02.04; accepted for publication 30.03.04.

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