Exciton effects in band-edge electroluminescence of silicon barrier structures A.V. Sachenko, A.P. Gorban, D.V. Korbutyak,V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 001-007 (2004).
Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 008-015 (2004).
Nucleation, growth and transformation of microdefects in FZ-Si V.I. Talanin, I.E. Talanin
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 016-021 (2004).
The simple approach to determination of active diffused phosphorus density in silicon M. Sasani
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 022-025 (2004).
Laser-induced photoconductivity of ferromagnetic semiconductors O.Yu. Semchuk, R.V. Bila, M. Willander, M. Karlsteen
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 026-030 (2004).
Investigation of -CdP2 crystals by laser spectroscopy methods I.I. Patskun, I.A. Slipukhina
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 031-035 (2004).
Electrodynamic linear response of superconductor film situated at the surface of semiconductor V. Lozovski, D. Reznik
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 036-042 (2004).
Ferromagnetism induced in diluted A1-x MnxB semiconductors V.P. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 043-051 (2004).
State of Cd1-xZnxTe and Cd1-xMnxTe surface depending on treatment type S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 052-055 (2004).
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge33As12Se55 O. Kondrat, N. Popovich, N. Dovgoshej
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 056-059 (2004).
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S.Sudarshan
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 060-062 (2004).
Individual glow bands photoluminescence of Mn2+ ions in plastically deformed ZnS single crystals T.A. Prokofiev, A.V. Kovalenko, B.A. Polezaev, M.F. Bulanyi, A.A. Gorban, O.V. Hmelenko
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 063-067 (2004).
Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in -doped GaAs M.I. Slutskii
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 068-071 (2004).
Luminescence properties of KAlP2O7 crystals doped with chromium ions O.V. Gomenyuk, S.G. Nedilko, N.V. Stus, O.V. Chukova
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 072-076 (2004).
Multiple scattering effect on luminescence of the dyed polymer matrix E. Tikhonov, V. Yashchuk, O. Prygodjuk, V. Bezrodny, Yu. Filatov
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 077-081 (2004).
Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures N.A. Vlasenko, H.-G. Purwins, Z.L. Denisova, Ya.F. Kononets, F.-J. Niedernostheide, L.I. Veligura, S. Zuccaro
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 082-087 (2004).
Recording of high efficiency diffraction gratings by He-Ne laser V.I. Min'ko, P.E. Shepeliavyi, V.A. Dan'ko, P.F. Romanenko, O.S. Litvin, I.Z. Indutnyy
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 088-092 (2004).
Optical recording of information pits in thin layers of chalcogenide semiconductors A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 093-100 (2004).
Properties of the optical microsensor based on observation of whispering-gallery modes V.V. Datsyuk
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 101-104 (2004).
Metrological support of satellite-borne UV-spectrometry using a backscattering technique V. Vashchenko, Zh. Patlashenko , E. Chernysh
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 105-107 (2004).
An improved contribution to optimize Si and GaAs solar cells performances N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat , Y. Saidi, C. Kenzai
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 108-111 (2004).
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell U. Hashim, R.M. Ayub, K.S. On
Semiconductor physics, quantum electronics and optoelectronics, 7 (1), P. 112-117 (2004).