PACS: 73.20. Fz, 73.20. Jc, 73.50. Fq

Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in -doped GaAs
M.I. Slutskii

Institute of Physics, NAS of Ukraine, 46, prospect Nauky, 03680 Kyiv, Ukraine
Fax: 380 (44) 2651589, phone: 380 (44) 2651432, E-mail: sarbey@iop.kiev.ua

Abstract. The electrical field dependencies of current I and its variation under phonon pulses - Iph, were measured in -doped GaAs with n = 5*1011 nm-2. It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase with E, and while the change in the first value was less than 5%, the second one increased by more than 3 times. The proposed explanation of experimental results is based on the nearness of the studied structure to a metal-insulator transition.

Keywords: quantum well, quantum localization.
Paper received 10.10.03; accepted for publication 30.03.04.

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