|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 009-013.
Effect of chemical and radiofrequency plasma treatment
on photoluminescence of SiOx films
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: indutnyy@isp.kiev.ua
Abstract. Effect of hydrogen radiofrequency plasma and chemical treatment on
photoluminescence (PL) spectra of SiO x layers containing Si nanoparticles are
investigated. Considerable PL intensity growth in the samples containing Si nanocrystals
(nc-Si-SiO x ) after plasma treatment is observed. The process saturates for time of 15
minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of
SiO x layers leads to the considerable changes in PL spectra effecting both on the band
shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-
SiO 2 layers is shown.
Keywords: nanocrystals, silicon oxide, photoluminescence, thin film.
| ||