Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)
Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo




Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 9 N 1

Excitons and trions in spherical semiconductor quantum dots
I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 001-008.
Abstract | Full text (PDF)

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I.Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 009-013.
Abstract | Full text (PDF)

Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films
A.N. Morozovska, E.A. Eliseev, D. Remiens, C. Soyer
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 014-021.
Abstract | Full text (PDF)

Diamond microcrystallites formation through the phase transition graphite - liquid - diamond
T.V. Semikina
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 022-028.
Abstract | Full text (PDF)

Investigation of the effective mass of electrons in solid solutions Hg1-x-y-zAxByCzTe
S.E. Ostapov, V.V. Zhikharevich, V.G. Deibuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 029-031.
Abstract | Full text (PDF)

Photoresponse in Ge/Si nanostructures with quantum dots
A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 032-035.
Abstract | Full text (PDF)

Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group
A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 036-042.
Abstract | Full text (PDF)

An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications
Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 043-054.
Abstract | Full text (PDF)

Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry
V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 055-062.
Abstract | Full text (PDF)

New fast-relaxed liquid crystal materials for optical communication networks
Yu. Garbovskiy, A. Sadovenko, A. Koval'chuk, G. Klimusheva, S. Bugaychuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 063-067.
Abstract | Full text (PDF)

Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
S.V. Denbnovetsky, N.V. Slobodyan
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 068-072.
Abstract | Full text (PDF)

Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents
M.P. Gorishnyi, A.F. Shevchuk, V.S. Manzhara, A.V. Koval'chuk, T.N. Koval'chuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 073-078.
Abstract | Full text (PDF)

Dynamic electrophysical characterization of porous silicon humidity sensing
S. Bravina, N. Morozovsky, R. Boukroub
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 079-083.
Abstract | Full text (PDF)

Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
S.V. Shutov, Ye.A. Baganov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 084-087.
Abstract | Full text (PDF)

Noise induced re-entrant transitions in exciton bistable system
Yu. Gudyma, B. Ivans'kii, O. Semenko
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 088-092.
Abstract | Full text (PDF)

Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect
P.M. Gorley, P.P. Horley, S.M. Chupyra
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 093-096.
Abstract | Full text (PDF)

Microwave irradiation of gallium arsenide
R. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.1. P. 097-098.
Abstract | Full text (PDF)