Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 032-035.
https://doi.org/10.15407/spqeo9.01.032

Photoresponse in Ge/Si nanostructures with quantum dots
A.S. Nikolenko1, S.V. Kondratenko2, O.V. Vakulenko3

Taras Shevchenko Kyiv National University, Physics Department, 6, prospect Academician Glushkov, 03022 Kyiv, Ukraine 1E-mail: Nikolenko_mail@ukr.net 2 E-mail: kondr@univ.kiev.ua 3 E-mail: vakul@univ.kiev.ua

Abstract. Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.

Keywords: quantum dots, negative photoconductivity, photovoltaic properties.

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