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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 036-042.
Solid state doping of CdxHg1-xTe epitaxial layers
with elements of V group
1I. Franko Lviv National University, 1, Universitetska str., 79000 Lviv, Ukraine
2Institute for Applied Problems of Mechanics and Mathematics, NAS of Ukraine
3-b, Naukova str., 79601 Lviv, Ukraine
3Yu. Fed’kovich Chernivtsi National University, 19, Universitetska str., 58012 Chernivtsi, Ukraine
4Institute of Physics of Polish Academy of Sciences, 32/46 Al. Lotnikow, 02-668 Warsaw, Poland
5Institute of Metallurgy and Materials Science, Polish Academy of Science
25 Reymonta Str., 30-059 Krakow, Poland
Abstract. Presented here are the results of studying the controlled doping with elements
of V group of the periodic table, arsenic As and antimony Sb, of narrow gap Cd x Hg 1−x Te
epitaxial layers during the isothermal growth from the vapour phase by the evaporation-
condensation-diffusion method. Three types of impurity sources have been used for solid
state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As
doped buffer Cd y Hg 1−y Te (y > x) epitaxial layers obtained by RF sputtering in mercury
glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe
substrates. The results of comparative analysis of galvano-magnetic measurements and
SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of
dopants in the Cd x Hg 1−x Te epitaxially grown layers.
Keywords: X-ray spectrometry, substrate, epitaxial layer.
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