Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 055-062.
https://doi.org/10.15407/spqeo9.01.055

Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry
V.A. Odarych1, A.Z. Sarsembaeva2, F.F. Sizov2, M.V. Vuichyk2

1Taras Shevchenko Kyiv National University, Physics Department, 2, prospect Academician Glushkov, 03022 Kyiv, Ukraine, e-mail: wladodarych@narod.ru
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: 525-84-72; e-mail: sannaz@bigmir.net

Abstract. The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were determined. It has been shown that the refraction index of the film (2.15…2.35) is less than that of the monocrystalline cadmium telluride (~3) that can testify the porous structure of the film or about roughness of the film surface. Obtained dependences of values of the film optical parameters from the angle of incidence testify weak heterogeneity of film properties along its depth. It was detected that there are the false solutions of the ellipsometric equation for each angle of incidence.

Keywords: multiangular ellipsometry, cadmium telluride films, film thickness.

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