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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 068-072.
Simulation of radiation characteristics of pulse X-ray devices
for non-destructive testing the semiconductor materials
National Technical University “KPI”, Electronics Department,
16, Politekhnichna str., 03056 Kyiv, Ukraine
Abstract. In the work, non-destructive testing the Si and Ge semiconductors by pulse X-
ray sources is discussed. Mathematical simulation of the radiation generation in
reflection and transmission anode tubes is performed. Details of energy spectrum
formation in these pulse tubes are analyzed, and its transformation when passing through
thin samples of semiconductor materials is discussed. The dependence of the amount of
radiation absorbed by the samples on the amplitude of acceleration voltage is calculated.
It is shown how the pulse operation regime and design features of pulse tubes influence
the characteristics of the X-ray radiation.
Keywords: non-destructive testing, pulse X-ray devices, X-ray radiation spectra,
radiation absorption.
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