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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 079-083.
Dynamic electrophysical characterization
of porous silicon humidity sensing
1Institute of Physics, NAS of Ukraine, 46, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: bravina@iop.kiev.ua
Abstract. The results of the investigation of changes of parameters of bipolar and
unipolar dynamic current-voltage characteristics and transient currents as well as
dynamic bipolar charge-voltage loops connected with the pulse change of humidity for
the samples of por-Si are presented. The hysteresis view of charge-voltage and current-
voltage curves is characteristic for poling processes in the space charge region similar to
that observed in the case of typical ionic conductors. Observed phases of transformation
of investigated electrophysical characteristics reflect the time sсale of processes in the
consequence “adsorption – dissociation and transfer – desorption”. The efficiency of
using the methods of dynamic electrophysical characterization for studying
characteristics of porous materials under fast humidity changes was demonstrated.
Keywords: porous silicon, humidity, bipolar and unipolar dynamic current-voltage
characteristics, transient currents.
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