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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 1. P. 084-087.
Elastic strains influence during GaSb/InAs heteroepitaxy
from liquid phase
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: shutov_sv@mail.ru, phone/fax: +380 (552) 515457
Abstract. Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial
layer planarity is considered. It is shown that minimal supercooling of solution-melt at
the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for
[111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate
22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer
surface caused by elastic strains and the critical thicknesses of misfit dislocation
formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is
shown experimentally that the lack of minimal supercooling leads to the island growth
mode.
Keywords: liquid phase epitaxy, strain, growth rate, GaSb, InAs.
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